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UOK A-Z index

-B.Sc in General Physics from Mustansiriyah University at 1995. -M.Sc in Physics /Laser from Mustansiriyah University at 2000. -PhD in Semiconductor Physics/ Laser diode from Universiti Sains Malaysia/Malaysia at 2008. -Post-Doc. Fellow (PDF) Semiconductor Physics/ Laser nanotechnology at Universiti Sains Malaysia/Malaysia at 2009. - WORK EXPERIENCE -Mustansiriyah University /IRAQ 1997-2000Manger of Laser Lab Alnahrian (Saddam) University /IRAQ 2000-2001 Giving Lectures in the Laser Lab -Higher Polytechnic Institute in Alkhoms/LIBYA 2001-2003Giving Lectures in General Physics Like: Laser, Solid State,Mathematics, Electricity, and Computer Languages -Universiti Sains Malaysia / MALAYSIA 2005- 2010 Designer of optoelectronics devices (lasers and LED) and transistors in NOR Lab. One of MBE Crystal Growth team. -University of Kufa /College of Engineering /Materials Engineering Department /IRAQ 2010 present Lecturer (Nanotechnology field ) Semiconductors and its applications Activates(2010) First conference for physics /Kufa university /IRAQ 6-7/10/2010 Conference invitation committee.- - First conference on Science /University of Wasit/IRAQ 28-29/11/2010Invited speaker(water pollution treatments using nanotechnology ). -Nanotechnology and Advance Materials Research Center /University of Technology/IRAQ 23-25 /11/2010 Attended first training course on Atomic Force Microscope (AFM) instrument. Nanotechnology and Advanced Materials Research Center /University of Technology /IRAQ- 12/12/2010 Invited speaker(Nanotechnology : simple and advance techniques). -Materials Engineering Department /College of Engineering /University of KUFA/IRAQ 28-31/11/2010 Attended first training course on Atomic absorption spectrophotometer instrument. - College of mathematics and computers/University of KUFA/IRAQ 28/12/2010 Invited speaker(Nanotechnology : quantum computer )
Highly inquisitive, creative and resourceful.

• Excellent skills in communication and collaboration

• Skilled in all phases of semiconductor technology.

• Good working knowledge of nanotechnology research.

• Excited by the challenge of research and experimentation

1- Electrical and Optical Properties of Materials

2- Lasers .

3-semicondctors and nanotechnology .

1. “Effects of metal work function and operating temperatures on the electrical properties of contacts to n-type GaN”

2006 IEEE International Conference on Semiconductor Electronics Proceedings, 815-819 (2006)

S. M. Thahab, H. Abu Hassan, Z. Hassan,

2. “Simulation of InGaN multiple quantum wells (MQWs) light emitting diodes”

2006 IEEE International Conference on Semiconductor Electronics Proceedings, 1034-1037 (2006)

S. M. Thahab, H. Abu Hassan, Z. Hassan,

3. “The growth of III-V nitrides heterostructure on Si substrate by plasma-assisted molecular beam epitaxy”

2006 IEEE International Conference on Semiconductor Electronics Proceedings, 928-932 (2006)

F. K. Yam, Z. Hassan, L. S. Chuah, N. Zainal, C. W. Chin, S. M. Thahab, M. Hussein,

4. “Optical performance of InGaN/AlGaN double heterostructure light emitting diodes”

IEEE Proceedings of the 6th International Conference on Numerical Simulation of Optoelectronic Devices, 13-14 (2006)

S. M. Thahab, H. Abu Hassan, Z. Hassan,

5. “ Optical Performance of InGaN/AlGaN Double heterostructure Light Emitting Diodes “

IEEE Proceedings of 6th International Conference on Numerical Simulation of Optoelectronic Devices,13-14(2006), Singapore.

S. M. Thahab, H. Abu Hassan, Z. Hassan

6.“Simulation of InGaN Multiple Quantum Wells (MQWs) Light Emitting Diodes (LEDs)”

2006 IEEE International Conference on Semiconductor Electronics Proceedings, 1034-1037(2006),Kuala Lumpur /MALAYSIA.

S. M. Thahab, H. Abu Hassan, Z. Hassan “

7.“Effects of Metal Work Function and Operating Temperatures on the Electrical Properties of Contacts to n-type GaN”

Proceedings of the 2006 IEEE International on Semiconductor Electronics (ICSE2006), 815-819,(2006), Kuala Lumpur /MALAYSIA.

S. M. Thahab, H. Abu Hassan, Z. Hassan

8.“The Growth of III-V Nitrides Heterostucture on Si Substrate by Plasma-Assisted Molecular Beam Epitaxy”

2006 IEEE International on Semiconductor Electronics Proceeding (ICSE2006)1034-1037, Kuala Lumpur /MALAYSIA(2006).

F.K. Yam, Z. Hassan, L. S. Chuah, N. Zainal, C.W. Chin, S. M. Thahab, M. Hussein “

9.“Simulation of GaN-based junction field effect transistor (JFET)”,

“European Workshop on III-Nitride Semiconductor Materials and Devices . September 17, Greece, (2006).

S. M. Thahab, H. Abu Hassan, Z. Hassan

10. “Effects of Al0.15Ga0.85 N Interlayer on the Electrical Properties of Contacts on n-type GaN” Proceedings of The Findings of The Young Researchers on Applied Science Conference (CAS 2006), 13Jun.2006, Kuala Lumpur /MALAYSIA

. S. M. Thahab, H. Abu Hassan, Z. Hassan.

20007

11. “Performance and optical characteristic of InGaN MQWs laser diodes”

Optics Express, 15 (5), 2380-2390 (2007)

S. M. Thahab, H. Abu Hassan, Z. Hassan,

12. “Performance and Optical Characteristic of InGaN MQWs Laser Diodes”

J.of Optics Express 15(5), pp.2380-2390 (2007).

S. M. Thahab, H. Abu Hassan, Z. Hassan

13. “Influence of Thick n-AlGaN Contact Layer on The Performance of InGaN Laser With Diode Modulation –Doped Strain-Layer Superlattices”

J.Solid State Science and Technology Letters,14(2)(Suppl.),72(2007).

S. M. Thahab, H. Abu Hassan, Z. Hassan “”

14. “The Performance of InGaN Laser Diodes Consists of a Separate Confinement Heterostructure with a Multiple Quantum Well Active Region”

J.Solid State Science and Technology Letters,14(2)(Suppl.),71(2007).pp. 130-138

S. M. Thahab, H. Abu Hassan, Z. Hassan, “”

15. “Al0.15Ga0.85N/GaN Heterostructure Field Effect Transistors (HFET) Device Structure Optimization and Thermal Effects”

Malaysia-Japan International Symposium on Advanced Technology 2007 ( MJISAT 2007 ), 12th -15th November, Kuala Lumpur /MALAYSIA,(2007).

S. M. Thahab, H. Abu Hassan, Z. Hassan

16.“InGaN Double Heterostructure (DH) Laser Diode Performance and Optimization”

Malaysia-Japan International Symposium on Advanced Technology 2007 ( MJISAT 2007 ), 12th -15th November, Kuala Lumpur /MALAYSIA,(2007).

S. M. Thahab, H. Abu Hassan, Z. Hassan

17.“High quality Al0.09Ga0.91N on Si(111) by RF-MBE and its application to MSM photodiode”

Proceeding of the ICMAT 2007 : Materials for Advanced Sensor and Detectors, 1-8(2007)-on CD. L.S.Chuah, Z.Hassan, H.Abu Hassan, F.K.Yam, S.M.Thahab, C.W.Chin, N.M.Ahmed

18. “Ridge Geometry InGaN Multi Quantum Well Structure Laser Diode “”

PERFIK 2007 National Conference 2007 , 26-28 Dec.2007 , Kuala Terengganu, Malaysia, (2007).

S. M. Thahab, H. Abu Hassan, Z. Hassan

2008

19. “Large Area GaN Metal Semiconductor Metal (MSM) Photodiode Using a Thin Low Temperature GaN cap Layer “

Journal of Nonlinear Optical Physics and Materials, Volume 17, Issue 01, pp. 59-69 (2008).

Chuah, L. S.; Hassan, Z.; Abu Hassan, H.; Chin, C. W.; Thahab, S. M.

20.“Quantum Well Number Effect and Characterization of InGaN/GaN Laser Diode”

The OSA Topical conference on Nanophotonics, Nanjing, CHINA , May 26-29 (2008).

S. M. Thahab, H. Abu Hassan, Z. Hassan “”.

21.“Improvement of Carrier Confinement Using AlGaN/GaN Multiquantum Barrier Layers in InGaN Laser Diode”

The OSA Topical conference on Nanophotonics, Nanjing, CHINA , May 26-29 (2008).

S. M. Thahab, H. Abu Hassan, Z. Hassan

22.“The Effects of Strained Single Qunatum Well on The Performance of InGaN Laser Diodes”

2nd international conference on functional material and devices 2008 (ICFMD2008), KL/ MALAYSIA( JUN. 2008)

S. M. Thahab, H. Abu Hassan, Z. Hassan

23.“Influences of AlGaN/GaN Strained Layer Superlattices on The Performance of InGaN DQWs Laser Diodes “

2nd international conference on functional material and devices 2008 (ICFMD2008), KL/ MALAYSIA( JUN. 2008).

S. M. Thahab, H. Abu Hassan, Z. Hassan

24. “BARRIER HEIGHT ENHANCED GaN SCHOTTKY DIODES USING A THIN AlN SURFACE LAYER”

International Journal of Modern Physics B Vol. 22, No. 29 (2008) 5167{5173

L. S. CHUAH, Z. HASSAN, H. ABU HASSAN, F. K. YAM, C. W. CHIN and S. M. THAHAB

25.“Effect of Varying Quantum Well Thickness onthe Performance of InGaN /GaN Single Quantum Well” Laser Diode AIP conference Proceeding, 1017,149-153(2008).

S. M. Thahab, H. Abu Hassan, Z. Hassan””

2009

26.“Performance of InGaN/GaN laser diode based on quaternary alloys stopper and superlattice layers”

World Academy of Science, Engineering and Technology, 55, 11-15 (2009)

S. M. Thahab, H. Abu Hassan, Z. Hassan,

27. “InGaN/GaN laser diode characterization and quantum well number effect”

CHINESE OPTICS LETTERS / Vol. 7, No. 3 / March 10, 2009 pp.226-230

S. M. Thahab, H. Abu Hassan, Z. Hassan”

28.“InAlGaN quaternary multi-quantum wells UV laser diode performance and characterization”

World Academy of Science, Engineering and Technology, 55, 352-355 (2009)

S. M. Thahab, H. Abu Hassan, Z. Hassan

29. “High Al-content AlxGa1?xN epilayers grown on Si substrate by plasma-assisted molecular beam epitaxy “

Journal of Alloys and Compounds, Volume 487, Issues 1-2, 13 November 2009, Pages 24-27

A.SH. Hussein, S.M. Thahab, Z. Hassan, C.W. Chin, H. Abu Hassan, S.S. Ng

2010

30. “The electrical properties of ZnO MSM Photodetector with Pt Contact Electrodes on PPC Plastic”

Journal of Electron Devices, Vol. 7, 2010, pp. 225-229

Nidhal. N. Jandowa, Kamarul Azizi Ibrahim , Haslan Abu Hassan Sabah M. Thahab Osama S Hamad

31.“ELECTRICAL PROPERTIES OF AlGaN/GaN HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS (HFETs) WITH AND WITHOUT Mg-DOPED CARRIER CONFINEMENT LAYER”

International Journal of Nanoscience Vol. 9, No. 4 (2010) 263–267

S. M. THAHAB ,A. Sh. HUSSEIN Z. HASSAN and H. ABU HASSAN

32.“PA-MBE growth and characterization of high Si-doped AlGaN on Si(111) substrate”

Optoelectronics and Advanced Materials – Rapid Communications, 4 (1), 59-62 (2010)

A. Sh. Hussein, Z. Hassan, S. S. Ng, S. M. Thahab, C. W. Chin, H. Abu Hassan

33.“The influence of geometrical structure of AlInGaN double quantum well (DQWs) UV diode laser on its performance and operating parameters”

AIP Conference Proceedings, 1250, 117-120 (2010)

A. J. Ghazai, S. M. Thahab, H. Abu Hassan, Z. Hassan

34. “Characterization of AlGaN/GaN heterostructure field effect transistors (HFETs) with variable thickness channel and substrate type”

AIP Conference Proceedings 1250, 81-84 (2010)

A. Sh. Hussein, Z. Hassan, H. Abu Hassan, S. M. Thahab

35.“Characteristics of ZnO MSM UV photodetector with Ni contact electrodes on poly propylene carbonate (PPC) plastic substrate “

Current Applied Physics, Volume 10, Issue 6, November 2010, Pages 1452-1455

N.N. Jandow, F.K. Yam, S.M. Thahab, H. Abu Hassan, K. Ibrahim

36.“The characteristics of ZnO deposited on PPC plastic substrate”

Materials Letters, Volume 64, Issue 21, 15 November 2010, Pages 2366-2368

N.N. Jandow, F.K. Yam, S.M. Thahab, K. Ibrahim, H. Abu Hassan

2011

37.“Growth and Characterization of High-quality GaN Nanowires on PZnO and PGaN by Thermal Evaporation “ Journal of Nanomaterials (2011) , In Press, Corrected Proof

L. Shekari, H. Abu Hassan, S. M. Thahab, Z. Hassan

38.“Quaternary ultraviolet AlInGaN MQW laser diode performance using quaternary AlInGaN electron blocking layer “” OPTICS EXPRESS / Vol. 19, No. 10 9 May 2011 pp. 9246-9254

A. J. Ghazai, S. M. Thahab H. Abu Hassan, and Z. Hassan

39.“A study of the operating parameters and barrier thickness of Al0.08In0.08Ga0.84N/AlxInyGa1-x-yN double quantum well laser diodes “

SCIENCE CHINA Technological Sciences, Vol.54 No.1: p. 1–5 January 2011

A. J. GHAZAI, S. M. THAHAB, H. ABU HASSAN & Z. HASSAN

40.“Effect of Al mole fraction on structural and electrical properties of AlxGa1?xN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy”

Applied Surface Science, Volume 257, Issue 9, 15 February 2011, Pages 4159-4164

A. SH. Hussein, Z. Hassan, S.M. Thahab, S.S. Ng, H. Abu Hassan, C.W. Chin

41.“Structural,

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