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Abstract
In this work a modified Freeman Ion source, used for ion
sputtering, is designed and constructed. The choice of this ion
source was based on its remarkable success in the
semiconductor industry employing ion implantation techniques.
A detailed technical description of the design and the
fabrication of the ion source are given. Thermionic emission
current measurements were performed and the discharge
characteristics of the ion source were closely monitored. Also,
the effects of some parameters such as; sputtering voltage,
pressure, magnetic field strength, arc voltage and filament
current on the value of the sputtered electrode current were
studied. It was found that these parameters can be
independently varied, enabling us to control the ion source
operation and the sputtering process. The primary results of
the extracted ion beams, using a simple stainless steel
extraction plate, show a reduction in the detected total ion
beam current under sputtering process. |
