Abstract

In this work, a heterojunction TiO2 on Si base has been made by use the D.C magnetron sputtering method with Ti target and oxygen plasma. The film was deposited on Si wafer and then undergone to the annealing process at various annealing temperatures were employed to assess film properties. The capacitance with reverse bias has been measured as a function of bias voltage at frequency 10 kHz, and these measurements have indicated the width of the depletion layer (W) surges with increasing of annealing temperature. The current–voltage characteristic It turned out through the current–voltage graph of TiO2/Si heterojunction the forward current at dark changes with change of applied voltage, in demeanor concordant with recombination-tunneling model. The results have shown that the dark current rises with growth of Ta. Also under illumination condition its clear to show there is a positive correlation relationship between the photocurrent and Ta.